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page 1 of 11 document no. 70-0177-04 www.psemi.com ?2005 peregrine semiconductor corp. all rights reserved. parameter conditions typical units operation frequency 1 dc - 4000 mhz insertion loss 1000 mhz 2500 mhz 0.65 0.70 db db isolation: rfc - rf1/rf2 1000 mhz 2500 mhz 33.5 21.5 db db isolation: rf1 - rf2 1000 mhz 2500 mhz 37.5 22 db db ?on? switching time 50% ctrl to 0.1 db of final value, 1 ghz 0.725 s ?off? switching time 50% ctrl to 25 db isolation, 1 ghz 0.625 s input 1 db compression 1000 mhz +32 dbm input ip3 1000 mhz, 20 dbm input power +53 dbm min dc 31.5 19.5 35.5 20 30 max 4000 0.75 0.80 1.5 1.3 return loss 1000 mhz 2500 mhz 19 16 db db rfc rf1 rf2 cmos control driver v1 v2 the PE4283 rf switch is designed to cover a broad range of applications from dc through 4000 mhz. this reflective switch integrates on-board cmos control logic with a low voltage cmos-compatible control interface, and can be controlled using either single-pin or complementary control inputs. the PE4283 operates using a +3 volt power supply. the PE4283 spdt high power rf switch is manufactured on peregrine?s ultracmos? process, a patented variation of silicon-on-insulator (soi) technology on a sapphire substrate, offering the performance of gaas with the economy and integration of conventional cmos. product specification spdt high power ultracmos? dc ? 4.0 ghz rf switch product description figure 1. functional diagram PE4283 features ? single-pin or complementary cmos logic control inputs ? 1.5 kv esd tolerance ? low insertion loss: 0.65 db at 1000 mhz, 0.70 db at 2500 mhz ? rfc-rf1/rf2 isolation of 33.5 db at 1000 mhz, 21.5 db at 2500 mhz ? rf1-rf2 isolation of 37.5 db at 1000 mhz, 22 db at 2500 mhz ? typical input 1 db compression point of +32 dbm ? ultra-small sc-70 package note: 1. device linearity will begin to degrade below 10 mhz. table 1. electrical specifications @ +25 c, v dd = 3 v (z s = z l = 50 ? ) figure 2. package type sc-70 6-lead sc-70
product specification PE4283 page 2 of 11 ?2005 peregrine semiconductor corp. all rights reserved. document no. 70-0177-04 ultracmos? rfic solutions table 2. pin descriptions electrostatic discharge (esd) precautions when handling this ultracmos? device, observe the same precautions that you would use with other esd-sensitive devices. although this device contains circuitry to protect it from damage due to esd, precautions should be taken to avoid exceeding the rating specified in table 3. latch-up avoidance unlike conventional cmos devices, ultracmos? devices are immune to latch-up. table 4. dc electrical specifications figure 3. pin configuration (top view) 1 2 3 4 5 6 v2 rfc v1 rf1 gnd rf2 283 pin 1 pin no. pin name description 1 rf1 rf port1 2 2 gnd ground connection. traces should be physically short and connected to ground plane for best performance. 3 rf2 rf port2 2 4 v1 switch control input, cmos logic level. 5 rfc rf common 2 6 v2 this pin supports two interface options: single-pin control mode . a nominal 3-volt supply connection is required. complementary-pin control mode . a complementary cmos control signal to v1 is supplied to this pin. parameter min typ max units v dd power supply voltage 2.0 3.0 3.3 v i dd power supply current (v1 = 3v, v2 = 3v) 8 50 a control voltage high 0.7x v dd v control voltage low 0.3x v dd v note: 2. all rf pins must be dc blocked with an external series capacitor or held at 0 vdc. table 3. absolute maximum ratings symbol parameter/conditions min max units v dd power supply voltage -0.3 4.0 v v i voltage on any input -0.3 v dd + 0.3 v t st storage temperature range -65 150 c t op operating temperature range -40 85 c p in input power (50 ? ) +34 dbm v esd esd voltage (hbm, ml_std 883 method 3015.7) 1500 v esd voltage (mm, jedec, jesd22-a114-b) 100 v absolute maximum ratings are those values listed in the above table. exceeding these values may cause permanent device damage. functional operation should be restricted to the limits in the dc electrical specifications table. exposure to absolute maximum ratings for extended periods may affect device reliability. figure 4. maximum operating input power 3 note: 3. operating within dc limits (table 4).
product specification PE4283 page 3 of 11 ?2005 peregrine semiconductor corp. all rights reserved. document no. 70-0177-04 www.psemi.com control voltages signal path pin 6 (v2) = v dd pin 4 (v1) = high rfc to rf1 pin 6 (v2) = v dd pin 4 (v1) = low rfc to rf2 table 5. single-pin control logic truth table table 6. complementary-pin control logic truth table control voltages signal path pin 6 (v2 ) = low pin 4 (v1) = high rfc to rf1 pin 6 (v2) = high pin 4 (v1) = low rfc to rf2 control logic input the PE4283 is a versatile rf cmos switch that supports two operating control modes; single-pin control mode and complementary-pin control mode. single-pin control mode enables the switch to operate with a single control pin (pin 4) supporting a +3-volt cmos logic input, and requires a dedicated +3-volt power supply connection (pin 6). this mode of operation reduces the number of control lines required and simplifies the switch control interface typically derived from a cmos processor i/o port . complementary-pin control mode allows the switch to operate using complementary control pins v1 and v2 (pins 4 & 6), that can be directly driven by +3-volt cmos logic or a suitable processor i/o port. this enables the PE4283 to operate in positive control voltage mode within the PE4283 operating limits.
product specification PE4283 page 4 of 11 ?2005 peregrine semiconductor corp. all rights reserved. document no. 70-0177-04 ultracmos? rfic solutions evaluation kit the spdt switch ek board was designed to ease customer evaluation of peregrine?s PE4283. the rf common (rfc) port is connected through a 50 ? transmission line via the top sma connector, j1. rf1 and rf2 are connected through 50 ? transmission lines via sma connectors j2 and j3, respectively. a through 50 ? transmission is available via sma connectors j4 and j5. this transmission line can be used to estimate the loss of the pcb over the environmental conditions being evaluated. the board is constructed of a two metal layer fr4 material with a total thickness of 0.031?. the bottom layer provides ground for the rf transmission lines. the transmission lines were designed using a coplanar waveguide with ground plane model using a trace width of 0.0476?, trace gaps of 0.030?, dielectric thickness of 0.028?, metal thickness of 0.0021? and r of 4.4. j6 and j7 provide a means for controlling dc and digital inputs to the device. j6-1 is connected to the device v2 input. j7-1 is connected to the device v1 input. series resistors (r1 and r2) are provided to reduce the package resonance between rf and dc lines. figure 5. evaluation board layouts figure 6. evaluation board schematic peregrine specification 102/0322 peregrine specification 101/0162
product specification PE4283 page 5 of 11 ?2005 peregrine semiconductor corp. all rights reserved. document no. 70-0177-04 www.psemi.com figure 8. insertion loss @ 3 v figure 7. insertion loss @ 25 c typical performance data figure 9. isolation: rf1-rf2 @ 25 c figure 10. isolation: rf1-rf2 @ 3 v
product specification PE4283 page 6 of 11 ?2005 peregrine semiconductor corp. all rights reserved. document no. 70-0177-04 ultracmos? rfic solutions figure 13. return loss: rf1-rf2 @ 25 c figure 14. return loss: rf1-rf2 @ 3 v typical performance data figure 11. isolation: rfc-rf1/rf2 @ 25 c figure 12. isolation: rfc-rf1/rf2 @ 3 v
product specification PE4283 page 7 of 11 ?2005 peregrine semiconductor corp. all rights reserved. document no. 70-0177-04 www.psemi.com typical performance data figure 15. return loss: rfc-rf1 @ 25 c figure 16. return loss rfc-rf1 @ 3 v figure 17. return loss: rfc-rf2 @ 25 c figure 18. return loss: rfc-rf2 @ 3 v
product specification PE4283 page 8 of 11 ?2005 peregrine semiconductor corp. all rights reserved. document no. 70-0177-04 ultracmos? rfic solutions figure 19. input 1 db compression and iip3 typical performance data
product specification PE4283 page 9 of 11 ?2005 peregrine semiconductor corp. all rights reserved. document no. 70-0177-04 www.psemi.com 1.80 2.20 0.65 bsc 1.80 2.40 1.15 1.35 0.15 0.30 0.80 1.10 0.80 1.00 0.10 0.30 0.10 0.40 0.10 0.18 0.00 0.10 figure 20. package drawing 6-lead sc-70
product specification PE4283 page 10 of 11 ?2005 peregrine semiconductor corp. all rights reserved. document no. 70-0177-04 ultracmos? rfic solutions table 7. ordering information order code part marking description package shipping method 4283-01 283 PE4283-06sc70-7680a 6-lead sc-70 7680 units / canister 4283-02 283 PE4283-06sc70-3000c 6-lead sc-70 3000 units / t&r 4283-00 PE4283-ek PE4283-06sc70-ek evaluation kit 1 / box 4283-51 283 PE4283g-06sc70-7680a green 6-lead sc-70 7680 units / canister 4283-52 283 PE4283g-06sc70-3000c green 6-lead sc-70 3000 units / t&r figure 21. tape and reel specifications pin 1 tape feed direction
product specification PE4283 page 11 of 11 ?2005 peregrine semiconductor corp. all rights reserved. document no. 70-0177-04 www.psemi.com sales offices the americas peregrine semiconductor corporation 9450 carroll park drive san diego, ca 92121 tel 858-731-9400 fax 858-731-9499 north asia pacific peregrine semiconductor k.k. 5a-5, 5f imperial tower 1-1-1 uchisaiwaicho, chiyoda-ku tokyo 100-0011 japan tel: +81-3-3502-5211 fax: +81-3-3502-5213 peregrine semiconductor, korea #b-2402, kolon tripolis, #210 geumgok-dong, bundang-gu, seongnam-si, gyeonggi-do, 463-480 s. korea tel: +82-31-728-4300 fax: +82-31-728-4305 europe peregrine semiconductor europe batiment maine 13-15 rue des quatre vents f- 92380 garches, france tel: +33-1-47-41-91-73 fax : +33-1-47-41-91-73 for a list of representatives in your area, please refer to our web site at: www.psemi.com data sheet identification advance information the product is in a formative or design stage. the data sheet contains design target specifications for product development. specifications and features may change in any manner without notice. preliminary specification the data sheet contains preliminary data. additional data may be added at a later date. peregrine reserves the right to change specifications at any time without notice in order to supply the best possible product. product specification the data sheet contains final data. in the event peregrine decides to change the specifications, peregrine will notify customers of the intende d changes by issuing a dcn (document change notice). the information in this data sheet is believed to be reliable. however, peregrine assumes no liability for the use of this information. use shall be entirely at the user?s own risk. no patent rights or licenses to any circuits described in this data sheet are implied or granted to any third party. peregrine?s products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to support or sustain life, or in any application in which the failure of the peregrine product could create a situation in which personal injury or death might occur. peregrine assumes no liabilit y for damages, including consequential or incidental damages, arising out of the use of its products in such applications. the peregrine name, logo, and utsi are registered trademarks and ultracmos and harp are trademarks of peregrine semiconductor corp. south asia pacific peregrine semiconductor, china shanghai, 200040, p.r. china tel: +86-21-5836-8276 fax: +86-21-5836-7652 space and defense products americas: tel: 505-881-0438 fax: 505-881-0443 europe, asia pacific: 180 rue jean de guiramand 13852 aix-en-provence cedex 3, france tel: +33(0) 4 4239 3361 fax: +33(0) 4 4239 7227

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